Smoothing of Single Crystalline SiC, GaN and ZnO by Catalyst Referred Etching

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Other Title
  • 触媒表面基準エッチングによる単結晶SiC，GaN，ZnO表面の平滑化
  • 触媒表面基準エッチングによる単結品SiC,GaN,ZnO表面の平滑化
  • ショクバイ ヒョウメン キジュン エッチング ニ ヨル タンケツヒン SiC,GaN,ZnO ヒョウメン ノ ヘイカツカ

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Description

We developed an ultraprecise surface preparation method named catalyst referred etching (CARE) in which a reference plate is employed to be copied on to the work surface during chemical etching. The reference plate has a catalytic nature to enhance etching reaction just on the surface. Single crystalline SiC (0001), GaN (0001), and ZnO (0001) surfaces were processed by CARE, and evaluated to be nearly atomically flat and crystallographically highly ordered.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 33 (6), 334-338, 2012

    The Surface Science Society of Japan

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