Emergence of Pseudoelectromagnetic Field in Epitaxial Graphene on Microfabricated Substrate
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- FUKIDOME Hirokazu
- Research Institute of Electrical Communication, Tohoku University
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- KOTSUGI Masato
- Japan Synchrotron Radiation Research Institue
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- KAWAI Yusuke
- School of Engineering, Tohoku University
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- IDE Takayuki
- Research Institute of Electrical Communication, Tohoku University
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- OHKOUCHI Takuo
- Japan Synchrotron Radiation Research Institue
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- KINOSHITA Toyohiko
- Japan Synchrotron Radiation Research Institue
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- SUEMITSU Maki
- Research Institute of Electrical Communication, Tohoku University
Bibliographic Information
- Other Title
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- 微細加工基板へのグラフェンのエピ成長による擬電磁場の創出
- ビサイ カコウ キバン エ ノ グラフェン ノ エピ セイチョウ ニ ヨル ギデンジジョウ ノ ソウシュツ
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Abstract
Graphene is the promising material for the next-generation devices owing to its novel electronic property which is governed by “slow” relativistic quantum theory. The theory tells that pseudospin responds to pseudoelectromagnetic field emerged by strain. In this paper, we have studied the pseudoscalar potential in epitaxial graphene grown on microfabricated SiC substrates (μ-EG). It is clarified by low-energy electron microscopy and Raman spectroscopy that pseudoscalar potential emerges in μ-EG due to interfacial strain, and is controlled by the microfabrication pattern.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 34 (7), 380-384, 2013
The Surface Science Society of Japan
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Details 詳細情報について
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- CRID
- 1390282681435255680
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- NII Article ID
- 10031184986
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- NII Book ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL BIB ID
- 024760718
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed