Wide-bandgap Semiconductor Devices using Group-III Nitride/SiC Heterointerface

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  • SUDA Jun
    Department of Electronic Science and Engineering, Kyoto University
  • MIYAKE Hiroki
    Department of Electronic Science and Engineering, Kyoto University
  • KIMOTO Tsunenobu
    Department of Electronic Science and Engineering, Kyoto University Photonic and Electronics Science and Engineering Center, Kyoto University

Bibliographic Information

Other Title
  • ＩＩＩ族窒化物／ＳｉＣヘテロ界面を用いたワイドギャップ半導体デバイス
  • 3族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス
  • 3ゾク チッカブツ SiC ヘテロ カイメン オ モチイタ ワイドギャップ ハンドウタイ デバイス

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Abstract

This paper describes group-III nitride (III-N)/SiC heterointerface and its device applications. Heteroepitaxial growth of III-N on SiC opens new opportunity of SiC-based heterojunction devices such as heterojunction bipolar transistors (HBTs). The authors developed growth methods to grow high-quality III-N on SiC by molecular-beam epitaxy. Fabricated GaN/SiC heterojunction exhibited type-II band-lineup. By using AlN/GaN short period superlattice as a quasi AlGaN alloy, the authors successfully controlled the band-lineup to be type-I and demonstrated common-emitter-mode operation of III-N/SiC HBTs.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 31 (12), 651-656, 2010

    The Surface Science Society of Japan

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