Growth Characteristics of GaAs and InAs Nanowhiskers

DOI Web Site Web Site 16 References

Bibliographic Information

Other Title
  • ＧａＡｓ，ＩｎＡｓナノウィスカーの成長と物性
  • GaAs InAs ナノウィスカー ノ セイチョウ ト ブッセイ

Search this article

Abstract

Growth characteristics of GaAs and InAs nanowhiskers formed by using the vapor-liquid-solid growth method during metal organic vapor-phase epitaxy are reviewed. The nanowhiskers grown along the <111>B crystallographic orientation were as thin as 10-500 nanometers and up to 5 micrometers long. The width of grown nanowhiskers was dependent on the growth temperature and the thickness of Au deposit used as a growth catalyst. The minimum width of the nanowhiskers was estimated to be about several nanometers, which is a growth limit predicted by the Gibbs-Thomson effect. Current-voltage characteristics of selectively grown Si-doped GaAs nanowhiskers were measured. A step-like current change as large as 0.5 microamperes was reproducibly observed on the background current-voltage curve of between 0 and 1.0 microamperes, suggesting that carrier trap levels on the whisker surface might be involved in the change.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 29 (12), 736-739, 2008

    The Surface Science Society of Japan

References(16)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top