InGaAs MOS Gate Stack Formation and the MOS Interface Properties
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- TAKAGI Shinichi
- The University of Tokyo
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- TAOKA Noriyuki
- The University of Tokyo Nagoya University
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- SUZUKI Rena
- The University of Tokyo
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- YOKOYAMA Masafumi
- The University of Tokyo
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- KIM Sang-Hyeon
- The University of Tokyo
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- TAKENAKA Mitsuru
- The University of Tokyo
Bibliographic Information
- Other Title
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- InGaAs MOSゲートスタック形成と界面特性
- InGaAs MOS ゲートスタック ケイセイ ト カイメン トクセイ
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Description
InGaAs MOS gate stack formation and the MOS interface control technologies, which are mandatory for realizing high performance InGaAs MOSFETs, are addressed with an emphasis on our recent achievements. Al2O3/InGaAs MOS gate stacks formed by Atomic Layer Deposition (ALD) are known as one of the most superior InGaAs MOS interfaces. The experimental results of Al2O3/InGaAs, HfO2/InGaAs and HfO2/Al2O3/InGaAs interfaces are presented. It is found that 1-nm-capaciatance equivalent thickness can be realized by HfO2/Al2O3/InGaAs gate stacks. Also, semiconductor inteface buffer layers inserted between InGaAs channels and gate oxides are shown to be effective in further improving the channel mobility.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 33 (11), 628-633, 2012
The Surface Science Society of Japan
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Details 詳細情報について
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- CRID
- 1390282681435686144
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- NII Article ID
- 130004486717
- 10031131003
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- NII Book ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL BIB ID
- 024089420
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed