書誌事項
- タイトル別名
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- Large Surface-state Conductivity in Quantum Bi Films
- ビスマス リョウシ ハクマク ニ オケル ヒョウメン ジョウタイ ニ ヨル デンキ デンドウ
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In situ microscopic-four-point probe conductivity measurements were performed for ultrathin bismuth (Bi) films formed on Si(111)-7×7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidation, we found clear evidence of large surface-state conductivity (σss∼1.5×10−3 Ω−1/¿ at room temperature) in ultrathin Bi(001) films. For the thinnest films (∼25 Å), the transport properties are dominated by the surface states. The temperature dependence of the surface-state conductivity showed a metallic behavior down to 15K. These results point to the possibility to use these Bi surface states for spintronics device applications utilizing the largely Rashba spin-split properties.
収録刊行物
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- 表面科学
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表面科学 30 (7), 374-379, 2009
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681435706880
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- NII論文ID
- 10025201030
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 10376077
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可