書誌事項
- タイトル別名
-
- Plasma Etch Challenges for Nanoscale ULSI Device Fabrication: Modeling and Simulation of Surface Roughening and Rippling during Plasma Etching of Si
- プラズマナノ カコウ ニ オケル ヒョウメン ラフネス ト リップル ケイセイ キコウ
この論文をさがす
抄録
Atomic- or nanometer-scale surface roughness has become an issue to be resolved in the fabrication of nanoscale ULSI devices, because the roughness at feature sidewalls and bottom surfaces is responsible for the variability in transistor performance. This paper presents a numerical and experimental study of surface roughening during plasma etching of Si in Cl2, with emphasis being placed on modeling, analysis, and control of plasma-surface interactions concerned. A three-dimensional atomic-scale cellular model (ASCeM-3D) based on Monte Carlo (MC) algorithm exhibited nanoscale surface roughening and rippling in response to ion incidence angle onto surfaces. Experiments were conducted to demonstrate the validity of our ASCeM-3D model, and to investigate how to suppress and/or control the formation of surface roughness and ripples during plasma etching, where a classical molecular dynamic (MD) simulation for Si/Cl and Si/SiCl systems was also invoked to further understand atomistic mechanisms concerned.
収録刊行物
-
- 表面科学
-
表面科学 34 (10), 528-534, 2013
公益社団法人 日本表面科学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282681435750272
-
- NII論文ID
- 10031202796
-
- NII書誌ID
- AN00334149
-
- ISSN
- 18814743
- 03885321
-
- NDL書誌ID
- 024936982
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
-
- 抄録ライセンスフラグ
- 使用不可