Generation Mechanism of Resistive Switching Effect Induced by Introductionof Hydrogen Ions into Perovskite-Type Oxide

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  • ペロブスカイト酸化物への水素イオン導入によって誘起される抵抗スイッチング効果の発現機構
  • ペロブスカイト サンカブツ エ ノ スイソ イオン ドウニュウ ニ ヨッテ ユウキ サレル テイコウ スイッチング コウカ ノ ハツゲン キコウ

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Abstract

We fabricated resistive random access memory (ReRAM) structure of Pt/Bi2Sr2CaCu2O8+δ(Bi−2212) bulk single crystal/Pt, and investigated Cu electronic states of the Bi−2212 by X−ray absorption near−edge structure. Hydrogen atoms are efficiently introduced into Bi−2212 with the assistance of catalytic effect of Pt by annealing Pt/Bi−2212 structure in hydrogen atmosphere. Resistive switching effect was generated by the reduction of Cu valence due to the formation of chemical bonding between in−plane oxygen of CuO2 layer and hydrogen (O−H bond), which corresponds to the formation of Cu(OH)2−like material, in the Bi−2212 in the vicinity of the Pt electrode. It is, therefore, suggested that the resistive switching effect occurred by bonding/dissociation of the O−H bond due to the migration of the hydrogen ions.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 35 (7), 356-360, 2014

    The Surface Science Society of Japan

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