水溶液中の不純物によるゲルマニウムおよびシリコン表面の汚染

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タイトル別名
  • Contamination of the Surface of Germanium and Silicon Caused by Impurities in Aqueous Solutions
  • スイヨウエキ チュウ ノ フジュンブツ ニ ヨル ゲルマニウム オヨビ シリコン ヒョウメン ノ オセン

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抄録

Using the radioactive tracers, 198Au, 111Ag, 59Fe, and 64Cu, experiments have been made to see how metallic impurities are absorbed on the surface of Ge, Si, Mo, clear quartz, and polyethylene from several kinds of aqueous solution, and how the absorbed impurities are desorbed by acid etching or NaCN aq. treatment. Besides, using the resistivity change of Ge by heat treatment in clean atmosphere, Cu concentration absorbed on Ge surface from water under various conditions has been measured. The experimental results are as follows: (1) Over 1013 atoms/cm2 of the metallic elements are absorbed on Ge and Si surfaces by dipping the crystals into water containing Au+++, Ag+, or Cu++ ion (1014 ions/c.c) for 30 min. (2) Fe(≈1014 atoms/c.c) in water is scarcely absorbed on any of the substances (<1010 atoms/cm2) for 30 min at pH=1, but absorbed largely (>1012 atoms/c.c) at pH=7. (3) Au, Ag (≈1014 atoms/c.c) in HF+HNO3, and Au (≈1014 atoms/c.c), Fe(≈1015 atoms/c.c) in NaCN aq. can be absorbed considerably (1010∼1013 atoms/cm2 for 30 min) on Ge and Si surface. The degree of cleanness of the surface of Ge, or Si as etched with acid, dipped in NaCN aq. and washed with pure water, is limited by the facts (1), (2) and (3).

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 26 (3), 177-182, 1962

    公益社団法人 日本金属学会

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