引上シリコン単結晶の直径方向の比抵抗分布

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タイトル別名
  • Resistivity Distribution Along the Diameter of a Pulled Silicon Single Crystal
  • ヒキアゲ シリコンタンケッショウ ノ チョッケイ ホウコウ ノ ヒ テイコウ ブンプ

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The resistivity distribution along the diameter of a Si single crystal pulled at a slow rotation rate was investigated by doping with boron and phosphorus. (1) When no impurity is doped, some of the N-type crystals present higher resistivity in the periphery than at the center, even after quenching from 1300°C. (2) When doped with phosphorus, the resistivity in the periphery was 10∼20% higher than at the center. While that of a boron-doped crystal was uniform along the diameter. (3) When doped with both phosphorus and boron, the resistivity of the N-type crystal becomes much higher in the periphery than at the center. But with the P-type crystal, the resistivity at the center is higher than in the periphery. The resistivity difference between the periphery and the center increases as the concentration ratio of boron and phosphorus approaches unity. This phenomenon can be explained by the results in the cases of doping with boron and phosphorus separately. The fact (2) may be explained as follows : First, by the thermal convection of a molten Si in a crucible during the crystal growth at a slow seed rotation, molten Si flows horizontally from the periphery to center near the solid-liquid interface. Second, the liquid flows picking up the impurities rejected by the advancing interface, if their distribution coefficient is smaller than unity. Therefore, the phosphorus concentration of the pulled crystal becomes higher near the center.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 26 (4), 244-248, 1962

    公益社団法人 日本金属学会

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