金属珪素中のリンの拡散

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タイトル別名
  • Diffusion of Phosphorus into Metallic Silicon
  • キンゾク ケイソ チュウ ノ リン ノ カクサン

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抄録

In order to elucidate the diffusion of phosphorus into metallic silicon, the following experiments were carried out. The diffusion coefficients of phosphorus into the (111) of single crystal silicon were investigated in the range 1180 to 1330°C, with use of radioactivated red phosphorus by electropolishing to remove successive layers. By means of X-ray and electron diffraction analysis, infrared absorption measurement and other techniques, the mechanism of the diffustion were discussed, and the following results were obtained. (1) The diffusion coefficient can be expressed as D=0.12exp(−68.3 kcal⁄RT) cm2/sec at low surface concentration. (2) The fall of lattice constant is compensated by oxygen atom in the case of phosphorus pentoxide diffusion. (3) Infrared absorption at 9 micron appears by phosphorus pentoxide diffusion, but no absorption by elementary phosphorus diffusion. (4) It is estimated that the skeleton of the layer produced on silicon with phosphorus pentoxide is a kind of cristobalite, and that its semistructural formuarl may be given as (SiO2)2PO3. (5) On the surface with highly diffused phosphorus,a diffraction line 2.5 Å appears-the line cerresponding to the (210) of silicon. In conclusion, these results demonstrate that a little difference, owing to different diffusant sources may be in existence.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 26 (5), 334-338, 1962

    公益社団法人 日本金属学会

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