On the Factors Influencing the Yield of Titanium in Crystalline Form by Gaseous Reaction

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  • 気相反応による金属チタン生成の収率に及ぼす種々の因子について
  • キソウ ハンノウ ニ ヨル キンゾク チタン セイセイ ノ シュウリツ ニ オヨボス シュジュ ノ インシ ニ ツイテ

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Abstract

Factors influencing the yield of TiCl4 and Mg were studied using the reaction apparatus previously reported which were constructed for producing Ti in crystalline form by the gaseous reaction. The deposition of Ti occurs mainly on the wall surfaces of Ti-ribbons or Ti cuttings placed net-wise in the reaction chamber. The quantity of the Ti-ribbons required for providing adequate wall surfaces was found to be only about 0.5% of the deposited quantity of Ti. The yield of reaction was influenced by the method of stretching the Ti-ribbons. To obtain high yield of deposition a complete mixing of TiCl4 and Mg vapors is necessary before the reaction occurs and the flow rates of both the vapors must be precisely controlled to avoid any flow of excess TiCl4, which may be caused by fluctuation of the flow rates. The high efficiencies of reaction of 98% for TiCl4 and 80% for Mg were obtained under the above conditions.

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