シリコン単結晶の比抵抗分布の解析

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タイトル別名
  • The Analysis of the Resistivity-Distribution Curve of Silicon Single Crystal
  • シリコンタンケッショウ ノ ヒ テイコウ ブンプ ノ カイセキ

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抄録

By means of the measurement of the resistivity distribution curve and the N, P type of silicon single crystal pulled by the Czochralski’s technique, it is possible to calculate the initial concentration of impurities according to the following well-known segregation equation, C=KC_0(1-g)^k-1where C is the concentration in the solid at the liquid-solid interface, g is the fraction of the original weight which has frozen, K is the segregation constant and C0 is the initial concentration of impurity in the melt. The calculated concentration fits the experimental data fairly good. This paper describes the mathematical analysis of some resistivity-distribution curve and its application for a test of impurities in quartz-crucible.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 24 (9), 593-597, 1960

    公益社団法人 日本金属学会

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