CdTe-In系平衡状態図およびInを溶媒としたCdTeの液相エピタキシャル成長

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  • Equilibrium Phase Diagram for the CdTe-In System and Liquid Phase Epitaxial Growth of CdTe from In Solution
  • CdTe Inケイ ヘイコウ ジョウタイズ オヨビ In オ ヨウバイ ト シ

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Equilibrium Phase diagram for the CdTe-In system has been determined by means of differential thermal analysis, dissolution measurement, X-ray diffraction and microscopic examination. This system can be considered to be a pseudobinary system from results of the X-ray experiment. The phase diagram of this system is a simple eutectic type and the eutectic point is 429.5 K for the composition of 4×10−3 mol% CdTe. The solubility of CdTe in liquid In, x (mole fraction), is represented as<BR>(This article is not displayable. Please see full text pdf.) <BR>Based on the phase diagram, liquid phase epitaxial growth of CdTe was carried out using an In solution containing CdTe. CdTe single crystals of n-type were grown on p-type CdTe substrates and epitaxial diodes were fabricated from these crystals. These epitaxial layers and diodes were characterized with the aid of X-ray, microscopic, and electrical techniques such as Hall effect, I−V, C−V and spectral photoresponse measurements.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 44 (3), 276-282, 1980

    公益社団法人 日本金属学会

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