BaZrO<SUB>3</SUB>バッファー層によるMgO基板上SmBa<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>y</SUB></I>膜の面内配向性向上機構
書誌事項
- タイトル別名
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- Mechanism for Improvement of In-Plane Alignment of SmBa<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>y</SUB></I> Films by BaZrO<SUB>3</SUB> Buffer Layer on MgO Substrate
- BaZrO3バッファー層によるMgO基板上SmBa2Cu3Oy膜の面内配向性向上機構
- BaZrO3 バッファーソウ ニ ヨル MgO キバン ジョウ SmBa2Cu3Oy マク ノ メン ナイハイコウ セイコウ ジョウ キコウ
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A BaZrO3(BZO) buffer layer improved in-plane alignment of SmBa2Cu3Oy(Sm123) films on MgO substrate. The reason for the effect of the BZO on the growth of Sm123 films can not be explained only by the idea of a simple lattice match, since the lattice constant of BZO is close to that of MgO. Then, a qualitative model of interfacial energy including a chemical contribution was introduced based on crystallographic consideration. The interface structure of the Sm123/BZO was observed by high-resolution transmission electron microscopy. The results indicated that the terminate plane consists of the BaO layer which is included in common both for the BZO and the Sm123 crystal structures. Further, the interfacial energies were investigated through the first-principles method. The calculated interfacial energy for a model of the Sm123/BZO interface with the BaO terminate plane was fairly lower than that of the Sm123/MgO one. Additionally, the effect of interfacial energies for hetero-epitaxial growth was discussed in view of heterogeneous nucleation. Thus, it was revealed that the BZO buffer layer plays an important role to reduce interfacial energy which leads to high possibility of the better hetero-epitaxial relationship.
収録刊行物
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- 日本金属学会誌
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日本金属学会誌 67 (6), 295-301, 2003
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282681466677632
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- NII論文ID
- 10011457164
- 130007340719
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- NII書誌ID
- AN00187860
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- ISSN
- 18806880
- 24337501
- 00214876
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- NDL書誌ID
- 6627776
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- データソース種別
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- JaLC
- NDL
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