Fracture Mechanical Approach to the Growth of Interfacial Defects in Al/Sapphire Joint Fabricated by SAB: Tearing-Off Test and Analysis by Finite Element Method

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  • Park Young Jo
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Enoki Manabu
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Suga Tadatomo
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Kishi Teruo
    Research Center for Advanced Science and Technology, The University of Tokyo

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Other Title
  • Al/サファイヤ常温接合体の界面欠陥成長に関する破壊力学的考察：はく離試験および有限要素法による解析
  • AI/サファイヤ常温接合体の界面欠陥成長に関する破壊力学的考察:はく離試験および有限要素法による解析・
  • AI サファイヤ ジョウオン セツゴウタイ ノ カイメン ケッカン セイチョウ ニ カンスル ハカイ リキガクテキ コウサツ ハクリ シケン オヨビ ユウゲン ヨウソホウ ニ ヨル カイセキ

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Bonded area is largely affected by the surface morphology and mechanical properties of materials, because the room temperature bonding process is carried out under a low temperature and pressure for a short time. Accordingly, interfacial defects cause unavoidable problems in many cases. For an application of this technology, it is important to elucidate the effect of interfacial defects on fracture behavior. Fracture mechanism and criterion for the growth of interfacial defects were investigated using the Al/Sapphire joint known for easy control of bondability. The results clearly showed that the growth of an interfacial defect was the dominant factor for the crack propagation. A critical stress intensity factor for the growth of interfacial defects was estimated by the analysis of FEM calculation and experimental observation.

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