Development of ICP-MS and Its Applications to Ultra-Trace Elemental Analysis of Semiconductor Materials.

DOI Web Site Web Site 19 References

Bibliographic Information

Other Title
  • ＩＣＰ質量分析法の進歩と半導体関連材料中超微量不純物元素分析への適用
  • ICP シツリョウ ブンセキホウ ノ シンポ ト ハンドウタイ カンレン ザイ

Search this article

Abstract

Over the past decade, inductively coupled plasma mass spectrometry (ICP-MS) has been regarded to be one of the most powerful techniques for ultra-trace elemental analysis. This technique offers excellent analytical characteristics, (1) simplicity of spectra compared with ICP-AES, (2) extremely low detection limits (pg/ml) for most elements, (3) a broad linear dynamic range, (4) rapid multi-element determination, (5) isotope ratio and isotope dilution method capability, and (6) rapid qualitative analysis for ultra-trace metal impurities. However, even the most modern ICP-MS instruments still suffer from a number of spectral and non-spectral interferences. In order to avoid isobaric overlaps, manufacturers adopted two different concepts. One is a combination of shield-torch and chamber-gas flow for a quadrupole type MS and the other is the usage of a double-focusing high resolution (HR) mass spectrometer. Nowadays, there are ten manufacturers of ICP-MS all over the world.<br>In this paper, the history of development of ICP-MS is briefly reviewed at first. Applications of ICP-MS to ultra-trace elemental analysis of semiconductor materials (from water to Si wafer) are then documented, focusing the present conditions and meaning of ICP-MS analysis in this industrial field. The increase of memory capacity in the integrated circuit demands the cleanliness as high as possible for each production process. The analytical techniques of (HR-)ICP-MS including ETV is becoming an essential technology to improve their productivity.

Journal

References(19)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top