多結晶Si-SiO<SUB>2</SUB>-Si構造におけるリン,ヒ素の挙動

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タイトル別名
  • Depth Profile of Phosphorus and Arsenic in Polycrystalline Si/SiO<SUB>2</SUB>/Si Structure
  • タケッショウ Si SiO2 Si コウゾウ ニ オケル リン ヒソ ノ キョ

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抄録

Phosphorus and arsenic profiles in polycrystalline Si-SiO2-Si structures were studied by ion microanalyzer, sup Pressed of edge effects by electronic gating. The Pand As diffused in the poly-Si layer were very uniform and had atendency of pile-up at the ierface of poly-Si-Sio2. The oxides of highly doped poly-Si contained the same level of Pas in the poly-Si and in the case of As one-tenth of the initial concentration in the poly-Si layer.

収録刊行物

  • 質量分析

    質量分析 25 (4), 363-370, 1977

    一般社団法人 日本質量分析学会

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