レーザー生成球対称 Sn プラズマからの極端紫外線(EUV)放射特性

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タイトル別名
  • Characterization of Extreme UV Radiation from Laser Produced Spherical Tin Plasmas for Use in Lithography
  • レーザー セイセイキュウ タイショウ Sn プラズマ カラ ノ キョクタン シガイセン EUV ホウシャ トクセイ

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説明

A new research project on extreme ultraviolet(EUV) source development has been started utilizing resources of laser fusion research. The main task of the project is to provide a scientific basis for generating efficient, debris-free, high power EUV plasma source for production of semiconductor devices. Spherical solid-tin targets were illuminated uniformly with twelve beams from GEKKO XII to create spherical plasmas, and EUV emission spectra were absolutely measured. The highest conversion efficiency of 3 % to 13.5 nm EUV light in 2 % bandwidth was attained at irradiance of around 5×1010W⁄cm2. The experimental data were well reproduced by a theoretical model taking power balance in the EUV plasma into consideration.

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