Junction properties of I2-doped polyacetylene with Indium.

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  • ヨウ素でドープしたポリアセチレンとインジウムとの接合特性
  • ヨウソ デ ドープシタ ポリアセチレン ト インジウム ト ノ セツゴウ トク

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Abstract

The junction properties of I2-doped polyacetylenes with Indium have been studied in the sandwich con-figuration. The conductivity of doped polyacetylenes was in the range of 6.60×10-3-7.62S/cm. All the I2-doped polyacetylenes gave rectifying contacts for Indium, while they gave ohmic contacts for Gold. Current-voltage and capacitance-voltage characteristics were examined and analyzed. Schottky barriershave been formed between I2-doped polyacetylene and Indium, though the ideality factors of the barrierswere high. With an increase of conductivity, the bulk resistance decreased and the reverse bias saturationcurrent increased.

Journal

  • KOBUNSHI RONBUNSHU

    KOBUNSHI RONBUNSHU 44 (4), 251-258, 1987

    The Society of Polymer Science, Japan

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