Dosimetry for middle level radiation using ESR spectroscopy of silicon dioxide reagents

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  • SHINNO Isamu
    Graduate School of Social and Cultural Studies, Kyushu University
  • XU Jianming
    Graduate School of Social and Cultural Studies, Kyushu University
  • ISOBE Toshiyuki
    Graduate School of Social and Cultural Studies, Kyushu University

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  • 二酸化ケイ素試薬のＥＳＲシグナルを用いた中レベルの線量測定
  • 2サンカ ケイソ シヤク ノ ESR シグナル オ モチイタ チュウ レベル ノ センリョウ ソクテイ

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Abstract

Although E' defect center in silicate glass and crystalline quartz was discovered for an excellent dosimetry for ultra-high level radiation above 104 Gy (Wieser and Regulla, 1990), in this work, Ge center in reagent quartz and HOHC (hydronium ion combined with oxygen hole center) in silicon dioxide made from silicon tetraethoxide were found, respectively, to be useful dosimetries up to 2000 Gy and 6000 Gy in the middle level radiation. The use of other defect centers such as vacancy or valence alteration radicals of E' (oxygen vacancy), POR (peroxyl radical) and NBOHC (non-bridging oxygen hole center), and besides, the centers due to Al or Ti impurities were, on the contrary, inadequate for the dosimetry in above ranges.

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