書誌事項
- タイトル別名
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- Relationship Between the Development Temperature and the Resist Characteristic of the Positive-Tone Novolak Resist
抄録
We examined the relationship between the development temperature and the resist properties of the positive-tone novolak resist. The resolution of the resist became higher with increasing development temperature, because the dissolution rate in exposure area was promoted by an acid-base neutralization reaction, and the dissolution rate in unexposed area was suppressed by an azo-coupling reaction with the photosensitive agent.<br/>When the development temperature was 22.5°C, the resist showed the best sensitivity. If the development temperature was lower, the dissolution rate of resist becomes lower by suppressing the acid-base neutralization reaction. If the development temperature was higher, the dissolution rate of resist becomes lower because an azo-coupling reaction which is caused the remaining photosensitive agent in exposed area. The resolution of resist becomes higher with increasing the development temperature, but Eth becomes higher along with it, and the sensitivity of resist becomes lower. Thus, we concluded that the best suitable resist development temperature (17.3°C∼40.0°C) is 22.5°C, taking into account the trade off of resolution and sensitivity.
収録刊行物
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- 高分子論文集
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高分子論文集 69 (11), 639-645, 2012
公益社団法人 高分子学会
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詳細情報 詳細情報について
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- CRID
- 1390282681501861888
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- NII論文ID
- 130004489369
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- ISSN
- 18815685
- 03862186
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可