Emerging spintronics memories

DOI Web Site
  • YODA Hiroaki
    Corporate Research & Development Center, Toshiba Corporation
  • OHSAWA Yuichi
    Corporate Research & Development Center, Toshiba Corporation
  • KATO Yushi
    Corporate Research & Development Center, Toshiba Corporation
  • SHIMOMURA Naoharu
    Corporate Research & Development Center, Toshiba Corporation

Bibliographic Information

Other Title
  • スピントロニクスメモリ最新動向
  • スピントロニクスメモリ最新動向 : STT-MRAM/スピンホールMRAM/VoCSM
  • スピントロニクスメモリ サイシン ドウコウ : STT-MRAM/スピンホール MRAM/VoCSM
  • STT-MRAM, Spin-Hall MRAM, and Voltage Control Spintronic Memory
  • STT-MRAM/スピンホールMRAM/VoCSM

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Description

<p>The realization of non-volatile working memory is a dream in the LSI field. However, non-volatility requires a large amount of energy to write data and no non-volatile memory has been used as working memory. New spintronics writing mechanisms, STT, Spin-Hall, and VoCSM have been studied. It has been concluded that Spin-Hall writing and VoCSM writing have non-volatility, reasonably small energy consumption, and practically unlimited endurance.</p><p>Further efforts in physics and engineering may realize the dream in a few years.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 88 (6), 394-398, 2019-06-10

    The Japan Society of Applied Physics

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