Deep-UV lasing (240-360 nm) of AlGaN multi-quantum well lasers under optical pumping

DOI Web Site 2 Citations 15 References
  • KAWANISHI Hideo
    Department of Electronic Engineering, Faculty of Engineering, Kohgakuin University
  • TAKANO Takayoshi
    New Product Technologies Development Department, Matsushita Electric Works,Ltd.
  • SENUMA Masanori
    Department of Electronic Engineering, Faculty of Engineering, Kohgakuin University
  • NUKUI Takeaki
    Department of Electronic Engineering, Faculty of Engineering, Kohgakuin University

Bibliographic Information

Other Title
  • 光励起によるAlGaN多重量子井戸型深紫外レーザーの発振特性
  • 研究紹介 光励起によるAlGaN多重量子井戸型深紫外レーザーの発振特性--発振波長域240～360nm
  • ケンキュウ ショウカイ ヒカリ レイキ ニ ヨル AlGaN タジュウ リョウシ イドガタシンシガイ レーザー ノ ハッシン トクセイ ハッシン ハチョウイキ 240 360nm
  • −発振波長域240〜360nm−

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Description

<p>Room-temperature deep-UV lasing has been demonstrated by AlGaN-multiple quantum well lasers under optical pumping. High-quality AlGaN with a high Al content, which has a wide band gap from the UV to the deep-UV spectrum region, can be grown by the newly developed Alternate Source-Feeding Epitaxy (ASFE). The shortest lasing wavelength of the AlGaN MQW laser was about 241 nm at room temperature.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 74 (11), 1458-1462, 2005-11-10

    The Japan Society of Applied Physics

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