Microscopic mechanism of negative bias temperature instability（NBTI）in MOS devices

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  • MARUIZUMI Takuya
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Musashi Institute of Technology
  • USHIO Jiro
    Advanced Research Laboratory, Hitachi Ltd.

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  • MOSFETの負バイアス温度不安定性の微視的メカニズム
  • MOSFET ノ フ バイアス オンド フアンテイセイ ノ ビシテキ メカニズム

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Abstract

<p>Negative bias temperature instability (NBTI), which brings about interface traps and positive oxide charges in p-type Metal Oxide Semiconductor (p-MOS) devices under negative gate bias and at elevated temperatures is a crucial reliability issue in recent complementary MOS (CMOS) technology. Much effort in terms of both experimental and theoretical approaches has been devoted to elucidate the mechanism of NBTI ; however, its microscopic mechanism is still unknown.</p><p>In this brief report, the outline of our proposed hydrogen migration model as a microscopic mechanism is reviewed and its successful explanation of the enhancement of NBTI for an interface incorporating nitrogen and the dependence of device lifetime on electric field is given. The results of first-principles calculations for proton/hydrogen-migration processes in Si/SiO2 interfaces are compared to show that the hydrogen migration process is essential in NBTI.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 77 (6), 676-680, 2008-06-10

    The Japan Society of Applied Physics

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