Surface studies of nitride thin films using scanning probe microscopy

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  • 窒化物半導体薄膜の走査プローブ顕微鏡による微視的評価
  • 最近の展望 窒化物半導体薄膜の走査プローブ顕微鏡による微視的評価
  • サイキン ノ テンボウ チッカブツ ハンドウタイ ハクマク ノ ソウサ プローブ ケンビキョウ ニ ヨル ビシテキ ヒョウカ

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Abstract

<p>The atomistic study of nitride thin films can be realized by combining a high-vacuum film growth system with an ultrahigh-vacuum scanning probe microscopy system. Detailed studies reveal various surface reconstructions depending on the polarity and the surface stoichiometry. Recently, the method has been successfully applied to the studies of the polarity control of GaN growth on Si, the halogen etching of nitride films, and the growth of thin metal films on nitride. Applications that take full advantage of the capability of atomic-scale characterization, such as the spin-polarized scanning tunneling microscopy of diluted magnetic semiconducting nitride films, are expected to be successfully realized in the near future.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 76 (5), 499-504, 2007-05-10

    The Japan Society of Applied Physics

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