Wide-band-gap nitride semiconductors play the leading role in energy saving and generation
Bibliographic Information
- Other Title
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- 省エネ創エネを牽引(けんいん)する窒化物ワイドギャップ半導体
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Journal
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- Oyo Buturi
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Oyo Buturi 81 (6), 454-454, 2012-06-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282752334037632
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- NII Article ID
- 10030594789
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles