Formation of silicon oxynitride on vicinal SiC(0001) and structure determination using low-energy electron diffraction

DOI Web Site 11 References
  • MIZUNO Seigi
    Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Science and Engineering, Kyushu University
  • SHIRASAWA Tetsuroh
    Institute for Solid State Physics, University of Tokyo
  • TANAKA Satoru
    Department of Applied Quantum Physics and Nuclear Engineering, Faculty of Engineering, Kyushu Univeristy
  • TOCHIHARA Hiroshi
    Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Science and Engineering, Kyushu University

Bibliographic Information

Other Title
  • 微傾斜SiC(0001)表面上の酸窒化シリコン薄膜の作製と低速電子回折による構造解析
  • ビケイシャ SiC 0001 ヒョウメンジョウ ノ サンチッカ シリコン ハクマク ノ サクセイ ト テイソク デンシ カイセツ ニ ヨル コウゾウ カイセキ

Search this article

Abstract

<p>The hydrogen-gas etching of a vicinal 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere lead to the formation of a silicon oxynitride (SiON) epitaxial layer with a periodicity of (√3×√3)R30°. Quantitative low-energy electron diffraction analysis revealed that the SiON epitaxial layer has a hetero-double-layer structure : a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the stability of the structure even against air exposure. The SiON epitaxial layer is formed on the “A” plane of the 6H-SiC(0001) surface keeping the periodic nanofacet structure of the substrate intact. The scanning tunneling spectroscopy of the SiON layer shows a bulk SiO2-like band gap of 9 eV. This epitaxial layer is expected to have a great potential for device applications.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 77 (10), 1240-1243, 2008-10-10

    The Japan Society of Applied Physics

References(11)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top