Integrated circuits made of silicon single-electron devices

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  • TAKAHASHI Yasuo
    Graduate School of Information Science and Technology, Hokkaido University

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  • 単電子デバイスを用いたSi集積回路
  • タンデンシ デバイス オ モチイタ Si シュウセキ カイロ

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Abstract

<p>Although rapid progress in silicon CMOS technology has enabled highly sophisticated information processing, higher levels of integration have come against the brick wall of power consumption. Single-electron devices (SEDs), which inherently have low power consumption, are a candidate for future low-power and highly functional devices. For such purposes, we must exploit the special features of SEDs. Here, the first topic is single-electron transfer, which is the ultimate operation in electronics. The room-temperature operation of the transfer and long-time holding of a single electron have already been attained. Consequently, new usages of SEDs are proposed for reducing the size and power consumption of the circuit.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 77 (3), 281-285, 2008-03-10

    The Japan Society of Applied Physics

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