Potential and system applications for MRAM based on perpendicular magnetic anisotropy

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  • 垂直磁化MRAMの可能性とシステム応用
  • スイチョク ジカ MRAM ノ カノウセイ ト システム オウヨウ

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Abstract

<p>Potential and system applications for Magneto-resistive Random Access Memory [MRAM] based on perpendicular magnetic anisotropy are described. Spin injection switching and domain wall motion switching by the spin-transfer torque of a spin polarized current are currently being investigated for MRAM applications. By using perpendicular magnetic anisotropy, the programming current can be reduced and the scalability of the cell size can be improved. two-terminal cells with spin injection switching are suitable for large-capacity storage because of their small cell size. On the other hand, three-terminal cells with domain wall motion switching are suitable for high-speed memory macros embedded in systems on chips. This indicates that three-terminal cells with domain wall motion switching can potentially be used as scalable memory cells of advanced MRAMs for systems on chips with zero standby power consumption.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 79 (12), 1071-1076, 2010-12-10

    The Japan Society of Applied Physics

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