Growth of high-quality ZnO-based epitaxial films and their device applications

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  • NIKI Shigeru
    National Institute of Advanced Industrial Science and Technology
  • TAMPO Hitoshi
    National Institute of Advanced Industrial Science and Technology
  • SHIBATA Hajime
    National Institute of Advanced Industrial Science and Technology

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Other Title
  • ZnO系エピタキシャル薄膜の高品質化とヘテロ接合
  • ZnOケイ エピタキシャル ハクマク ノ コウヒンシツカ ト ヘテロ セツゴウ

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Abstract

<p>ZnO is a wide-gap semiconductor with a bandgap of Eg〜3.4eV that has great potential for both optical and electronic device applications. We first attempted to improve the electrical properties of ZnO films by reducing the residual defect concentration and enhancing the electron mobility. Improvements in the growth techniques made it possible to grow ZnO epitaxial films with electron concentrations of n< 5×1015cm-3 and mobility of μ >150cm2/Vs, indicating that semiconductor-grade ZnO films were grown. Zn1-xMgxO/ZnO heterostructures were also investigated for device applications. The formation of a two-dimensional electron gas and the operation of a high-electron-mobility device based on Zn1-xMgxO/ZnO heterostructures were confirmed. An anomalous improvement in the integrated photoluminescence intensity with increasing Mg composition, which is promising for ultraviolet-light-emitting device applications, was also observed.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 77 (5), 500-507, 2008-05-10

    The Japan Society of Applied Physics

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