GaN field-effect transistor for terahertz wave detection

DOI Web Site 10 References
  • ONISHI Toshikazu
    Semiconductor Device Development Center, Industrial Device Company, Panasonic Corporation
  • TAKIGAWA Shinichi
    Semiconductor Device Development Center, Industrial Device Company, Panasonic Corporation
  • OTSUJI Taiichi
    Research Institute of Electrical Communication, Tohoku University

Bibliographic Information

Other Title
  • テラヘルツ波検出GaNトランジスタの開発
  • テラヘルツハ ケンシュツ GaN トランジスタ ノ カイハツ

Search this article

Description

<p>A terahertz (THz) detector that uses plasmon resonance in the field-effect transistor has attracted considerable attention as a compact and room-temperature-operating device applicable to various fields, such as security imaging and material analysis. We have developed a room-temperature terahertz detector with high responsivity by using gallium nitride, which can increase the intensity of plasmon resonant response, as well as by designing the electrodes as a dipole antenna of an incoming THz electromagnetic wave.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 81 (6), 506-510, 2012-06-10

    The Japan Society of Applied Physics

References(10)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top