Improvement of Field-effect Mobility in Top-gate Organic Field-effect Transistors Using Solution-processed Molybdenum Trioxide Hole Injection Layers

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  • AIBA Tomoya
    Department of Physics and Electronics, Osaka Prefecture University
  • NAGASE Takashi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University
  • KOBAYASHI Takashi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University
  • SADAMITSU Yuichi
    R & D Planning Division, Nippon Kayaku Co., Ltd.
  • NAITO Hiroyoshi
    Department of Physics and Electronics, Osaka Prefecture University The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University

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Other Title
  • 塗布形成した三酸化モリブデン正孔注入層を用いたトップゲート有機電界効果トランジスタの移動度改善
  • トフ ケイセイ シタ サン サンカ モリブデン セイコウ チュウニュウソウ オ モチイタ トップゲート ユウキ デンカイ コウカ トランジスタ ノ イドウド カイゼン

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Abstract

<p>Here, we report on the enhancement of field-effect mobility in solution-processed top-gate organic field-effect transistors (OFETs) based on 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) using solution-processed molybdenum trioxide (MoO3) layers. An aqueous solution of MoO3 was deposited by the spin-coating technique on Au source-drain electrodes fabricated on the Si/SiO2 substrates to form an hole injection layer for the C8-BTBT semiconductor layer. It is found that by exposing MoO3-coated Au electrodes to ultraviolet/ozone (UV/O3) the field-effect mobility of top-gate C8-BTBT FETs significantly increases and the channel-width normalized contact resistance is remarkably reduced to 0.4kΩcm. Top-gate C8-BTBT FET devices with a channel length of 5μm exhibit high effective mobilities up to 1.4cm2V-1s-1. The obtained results indicate that hole doping to C8-BTBT layers by UV/O3-treated MoO3 contributes strongly to the reduction in the access resistance of top-gate C8-BTBT FETs.</p>

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