Fundamental Investigation of Isolated DC-DC Converter with Class-Φ2 Inverter
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- Yanagisawa Yuta
- Graduate School of Engineering, Osaka University
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- Miura Yushi
- Graduate School of Engineering, Osaka University
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- Handa Hiroyuki
- Panasonic Corporation
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- Ueda Tetsuzo
- Panasonic Corporation
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- Ise Toshifumi
- Graduate School of Engineering, Osaka University
Bibliographic Information
- Other Title
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- Φ2級インバータ回路を用いた絶縁形DC-DCコンバータに関する基礎検討
- Ph2キュウ インバータ カイロ オ モチイタ ゼツエンケイ DC-DC コンバータ ニ カンスル キソ ケントウ
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Abstract
In recent years, the development and application of GaN-HFET has become actively, which is one type of a wide band gap semiconductor. The GaN-HFETs has specialize high frequency operation, it is possible to improve the performance of the power converter by improving the switching frequency. In this paper, we describe a basic investigation in the case of GaN-HFETs applied Class-Φ2 inverter circuit, which is a resonant power conversion circuit and operated as an isolated DC-DC converter with a switching frequency at 13.56 MHz.
Journal
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- Journal of the Japan Institute of Power Electronics
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Journal of the Japan Institute of Power Electronics 43 (0), 73-80, 2017-03-31
The Japan Institute of Power Electronics
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Details 詳細情報について
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- CRID
- 1390282763061157248
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- NII Article ID
- 130007501629
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- NII Book ID
- AA11921199
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- ISSN
- 18843239
- 13488538
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- NDL BIB ID
- 028990732
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed