Electronic States in EuT<sub>2</sub>Si<sub>2</sub>(T: transition metal) and EuT<sub>2</sub>Ge<sub>2</sub>
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- Ohnuki Y.
- Fac. of Sci., Univ. of the Ryukyus
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- Ashitomi Y.
- Grad. Sch. of Eng. and Sci., Univ. of the Ryukyus
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- Nakashima M.
- Fac. of Sci., Shinshu Univ.
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- Amako Y.
- Fac. of Sci., Shinshu Univ.
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- Nakamura A.
- Inst. for Material Reseach, Tohoku Univ.
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- Honda F.
- Inst. for Material Reseach, Tohoku Univ.
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- Aoki D.
- Inst. for Material Reseach, Tohoku Univ.
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- Takeuchi T.
- Low Temperature Center, Osaka Univ.
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- Kida T.
- Grad. Sch. Sci., Osaka Univ.
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- Tahara T.
- Low Temperature Center, Osaka Univ.
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- Hagiwara M.
- Low Temperature Center, Osaka Univ.
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- Uwatoko Y.
- ISSP, Univ. of the Tokyo
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- Hedo M.
- Fac. of Sci., Univ. of the Ryukyus
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- Nakama T.
- Fac. of Sci., Univ. of the Ryukyus
Bibliographic Information
- Other Title
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- EuT<sub>2</sub>Si<sub>2</sub>(T:遷移金属)とEuT<sub>2</sub>Ge<sub>2</sub>単結晶の電子状態
Journal
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- Meeting Abstracts of the Physical Society of Japan
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Meeting Abstracts of the Physical Society of Japan 72.2 (0), 2017-2017, 2017
The Physical Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282763065028608
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- NII Article ID
- 130007508036
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- ISSN
- 21890803
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles