Basics and Interpretation of Scanning-Ion-Microscope Images

Ishitani Tohru

doi:10.11410/kenbikyo.47.1_26

Bibliographic Information

Other Title

走査イオン顕微鏡像の基礎と解釈

Abstract

<p>Secondary-electron (SE) image information in a scanning ion microscope (SIM) using gallium (Ga) and helium (He) ion species has been described comparing with a scanning electron microscope (SEM). Using the Monte Carlo (MC) simulation, the trajectories of all the collision partners (i.e., primary ions, recoiled target atoms, and excited electrons (electron cascade) have been simulated to excite SEs under the ion impacts. For Ga ion impact, the SE yields show a gradual decrease with increasing Z₂, being superimposed with a periodic change. This general Z₂-dependency is opposite to that for electron impact. The Z₂-dependency for He ion impact is characterized to the middle position of Ga ion and electron impacts and is weak. The characteristics of SIM images have been compared with SEM images in material contrast, information depth, incident-angle dependency of SE yields dominating topography contrast, and energy distribution of SEs influencing voltage contrast.</p>

Journal

KENBIKYO

KENBIKYO 47 (1), 26-32, 2012-03-30

The Japanese Society of Microscopy

Keywords

Details 詳細情報について

CRID: 1390283659829801088

NII Article ID: 130007768861

DOI: 10.11410/kenbikyo.47.1_26

ISSN: 24342386; 13490958

Text Lang: ja

Data Source

JaLC
CiNii Articles

Abstract License Flag: Disallowed

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