Low Temperature Copper-Copper Quasi-Di rect Bonding Utilizing Ultra-Thin Metal Interlayer Formation by Atomic Layer Deposition

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  • 原子層堆積法による極薄膜金属中間層形成を利用した 低温Cu-Cu 疑似直接接合技術
  • ゲンシソウ タイセキホウ ニ ヨル ゴクウスマク キンゾク チュウカンソウ ケイセイ オ リヨウ シタ テイオン Cu-Cu ギジ チョクセツ セツゴウ ギジュツ

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Description

We studied a method of low temperature Cu-Cu quasi-direct bonding inserting ultra-thin metal layer deposited by atomic layer deposition（ALD）. A thin Pt layer was selected as a metal intermediate layer because Pt can be easily diffused into Cu. Area selective deposition of Pt on Cu surface was achieved without any mask using ALD. The Cu-Cu bonding using an ultra-thin Pt interlayer realized enough shear strength of 9.5 MPa, which was 5.1 times larger than without using the Pt interlayer. The Pt intermediate layer promoted atomic diffusion on the bonding interface at 300℃, which can improve the shear strength of the Cu-Cu bonding. The proposed method is a useful for low-temperature mounting, which is an issue for 2.5D/ 3D mounting.

Journal

  • Journal of Smart Processing

    Journal of Smart Processing 9 (5), 232-236, 2020-09-10

    Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan)

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