Deep Ultraviolet Raman study of subsurface damage on single crystalline diamond by Ga ion irradiation (4th report)

DOI

Bibliographic Information

Other Title
  • 集束イオンビーム照射により形成された単結晶ダイヤモンド変質層の深紫外ラマン散乱（第4報）
  • Oxygen concentration dependence of the etching of subsurface damaged layer by deep ultraviolet light irradiation
  • 深紫外光照射によるラマン散乱スペクトルの変化の酸素濃度依存性

Description

<p>An altered layer is formed on the surface of single crystal diamond by FIB processing. In this study, we focus on the process of structural change of the work-affected layer by deep ultraviolet irradiation using micro-Raman spectroscopy. Etching of the work-affected layer is observed by irradiating deep ultraviolet rays in an oxygen atmosphere. It has been clarified that the oxygen concentration affects the etching rate. In the presentation, we will discuss the process of structural change of the work-affected layer by deep ultraviolet irradiation and the surface structure after etching.</p>

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Keywords

Details 詳細情報について

  • CRID
    1390285697601912320
  • NII Article ID
    130007896921
  • DOI
    10.11522/pscjspe.2020s.0_88
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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