High-performance graphene transistor using SiC single crystalline thin film on device wafers
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- Fukidome Hirokazu
- RIEC, Tohoku University
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- Akiyama Shoji
- ShinEtsu Chemical
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- Tashima Keiichiro
- RIEC, Tohoku University
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- Funakubo Kazutoshi
- RIEC, Tohoku University
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- Kohama Roki
- RIEC, Tohoku University
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- Konishi Shigeru
- ShinEtsu Chemical
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- Mogi Hiroshi
- ShinEtsu Chemical
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- Kawai Makoto
- ShinEtsu Chemical
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- Kubota Yoshihiro
- ShinEtsu Chemical
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- Horiba Koji
- KEK
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- Watanabe Issei
- NICT
Bibliographic Information
- Other Title
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- デバイス基板転写SiC単結晶薄膜を用いた高性能グラフェン・トランジスタ
Abstract
<p>Graphene has promising physical properties for next-generation wireless communication. However, the drain current of graphene transistor could not be saturated, and the drain current modulation is degraded, compared to the ideal value expected from the physical properties. We succeded in achieving the drain current saturation and incresing the drain current modulation by one order of magnitude, by controlling the graphene-insulator interface.</p>
Journal
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- Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science
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Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2020 (0), 279-, 2020
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390286981362014720
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- NII Article ID
- 130007959374
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- ISSN
- 24348589
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed
