Epitaxial growth of <i>κ</i>- and <i>γ</i>-Ga<sub>2</sub>O<sub>3</sub> thin films with alloying and lattice matching

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  • 混晶と格子整合性からアプローチする<i>κ</i>相，<i>γ</i>相酸化ガリウムの結晶成長技術
  • 混晶と格子整合性からアプローチするκ相,γ相酸化ガリウムの結晶成長技術
  • コンショウ ト コウシ セイゴウセイ カラ アプローチ スル kソウ,gソウ サンカ ガリウム ノ ケッショウ セイチョウ ギジュツ

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Abstract

<p>Gallium oxide (Ga2O3) has a large bandgap (approx. 5.0 eV) and exhibits an excellent potential for power-switching and deep-ultraviolet optoelectronic devices. Ga2O3 possesses five polymorphs, namely α-, β-, γ-, δ-, and κ-phases. In this article, among the five polymorphs, we introduce the epitaxial growth of γ- and κ-phase Ga2O3. The κ-Ga2O3 exhibits a ferroelectric property and a large spontaneous polarization. The γ-Ga2O3 with the incorporation of Al2O3 is lattice-matched to a spinel substrate and exhibits a large bandgap of 5.8 eV. The results of the epitaxial growth of κ- and γ-Ga2O3 thin films by mist CVD are discussed, focusing on lattice matching and alloying.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 90 (6), 360-364, 2021-06-05

    The Japan Society of Applied Physics

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