A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

DOI Web Site 被引用文献3件 参考文献30件
  • Zhang Yuxin
    The School of Information Science and Engineering, Harbin Institute of Technology (Weihai)
  • Li Jinghu
    The College of Computer and Information Sciences, Fujian Agriculture and Forestry University Xiamen Eochip Seiconductor Co., Ltd.
  • Wang Xinsheng
    The School of Information Science and Engineering, Harbin Institute of Technology (Weihai)
  • Luo Zhicong
    Xiamen Eochip Seiconductor Co., Ltd. The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University
  • Zhou Yanfei
    Xiamen Eochip Seiconductor Co., Ltd.

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説明

<p>A high-precision and low-temperature-coefficient bandgap voltage reference is proposed in 0.11 µm CMOS process. A temperature piecewise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.</p>

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  • IEICE Electronics Express

    IEICE Electronics Express 18 (11), 20210162-20210162, 2021-06-10

    一般社団法人 電子情報通信学会

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