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The Electronic Band Structure Evaluation of OLED Materials by Combination of LEIPS and UPS
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- Terashima Masahiro
- ULVAC-PHI Inc.
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- Miayayama Takuya
- ULVAC-PHI Inc.
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- Shirao Tetsuro
- ULVAC-PHI Inc.
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- Mo Hin Wai
- i<sup>3</sup>-opera
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- Hatae Yasuhiro
- i<sup>3</sup>-opera
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- Fujimoto Hiroshi
- i<sup>3</sup>-opera
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- Watanabe Katsumi
- ULVAC-PHI Inc.
Bibliographic Information
- Other Title
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- LEIPSおよびUPSを用いた有機EL材料のバンド構造評価
- LEIPS オヨビ UPS オ モチイタ ユウキ EL ザイリョウ ノ バンド コウゾウ ヒョウカ
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Description
The electron affinity and ionization potential of OLED materials were evaluated using low energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS), which can be incorporated into a multi-technique X-ray Photoelectron Spectroscopy (XPS) system. The energy level of lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) were estimated by LEIPS and UPS for three kinds of samples, i.e. CuPc (Cu phthalocyanine) thin film (10 nm) / ITO (indium tin oxide) film / glass substrate, C60 thin film (10 nm) / Au film / ITO film / glass substrate, and α-NPD (Bis[N-(1-naphthyl)-N-phenyl]benzidine) thin film (10 nm) / ITO film / glass substrate, respectively. The band gap at the surface of the materials were determined by these levels. In addition, by utilizing Ar-gas cluster ion beam (Ar-GCIB), in-situ LEIPS and UPS depth profiling of interface of the multilayer films were also demonstrated.
Journal
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- Journal of Surface Analysis
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Journal of Surface Analysis 27 (1), 34-44, 2020
The Surface Analysis Society of Japan
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Details 詳細情報について
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- CRID
- 1390288912169396096
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- NII Article ID
- 130008070322
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- NII Book ID
- AA11448771
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- ISSN
- 13478400
- 13411756
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- NDL BIB ID
- 030705420
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed