書誌事項
- タイトル別名
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- Crystallization Control of Fullerene by Mist Vapor Deposition Method and Its Application to n-Type Organic Transistors
- ミストデポジションホウ ニ ヨル フラーレン ノ ケッショウカ セイギョ ト nガタ ユウキ トランジスタ エ ノ オウヨウ
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<p>We discussed on crystallization and crystal length control of fullerene(C60) by mist vapor deposition method and fabrication of n-type organic transistor. It was revealed that these crystallinities were affected by the substrate temperature and the amount of mist supplied. The n-type organic transistors using fullerene crystal were able to operate in the atmospheric condition. The electron mobility was estimated to be 7.36×10-6 [cm2/Vs]. Furthermore, the transistor characteristics have been improved by applying HMDS treatment and annealing processing. In particular, the HMDS treatment caused crystals to precipitate between the source and drain electrodes.</p>
収録刊行物
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- 材料
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材料 70 (10), 745-750, 2021-10-15
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390289774664680576
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- NII論文ID
- 130008105915
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 031778769
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可