Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation
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- Tsutomu ARAKI
- Dept. of Electrical and Electronic Engineering, Ritsumeikan Univ.
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- Faizulsalihin Bin ABAS
- Dept. of Electrical and Electronic Engineering, Ritsumeikan Univ.
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- Ryouichi FUJITA
- Dept. of Electrical and Electronic Engineering, Ritsumeikan Univ.
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- Shinichiro MOURI
- Dept. of Electrical and Electronic Engineering, Ritsumeikan Univ.
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<p>The objective of this study was to investigate the repeatability of in situ surface modification by radical beam irradiation to reduce threading dislocation density in InN film. The growth of InN template and N radical irradiation processes were repeated twice in situ in the radio-frequency plasma-excited molecular beam epitaxy chamber before the regrowth of InN film on the N radical irradiated template. Transmission electron microscopy was applied to study dislocation behaviors of the InN film grown. In this letter, we show cross-sectional-view transmission electron microscopy evidence of the threading dislocation reduction from ~2.8×1010 cm-2 in the first irradiated InN layer to ~2.0×1010 cm-2 in the second irradiated InN layer, and to ~1.3×1010 cm-2 in the top regrown InN layer. The mechanisms of threading dislocation reduction were also studied.</p>
収録刊行物
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- 材料
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材料 70 (10), 732-737, 2021-10-15
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390289774665796864
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- NII論文ID
- 130008105967
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 031778760
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可