Electronic properties of ultrathin Bi<sub>2</sub>Te<sub>3</sub> films grown on CaF<sub>2</sub>(111)
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- Hatta Shinichiro
- Kyoto university
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- Higaki Shinpei
- Kyoto university
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- Okuyama Hiroshi
- Kyoto university
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- Aruga Tetsuya
- Kyoto university
Bibliographic Information
- Other Title
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- CaF<sub>2</sub>(111)表面上に成長させたBi<sub>2</sub>Te<sub>3</sub>超薄膜の電子物性
Abstract
<p>We have studied the electronic structure and electrical conduction of ultrathin Bi2Te3 films grown on CaF2(111)/Si(111) by molecular beam epitaxy. Angle-resolved photoelectron spectroscopy (ARPES) showed that the electronic structure of the films near the Fermi level consists of a surface band and a conduction band. Sheet electrical conductivity of the films was measured by a home-built UHV-compatible four-point probe. Residual conductivity σ0 measured at 10 K showed a rapid increase above three quintuple layer (QL). ARPES and low-energy electron diffraction (LEED) results indicate that the thickness dependence in σ0 is mainly attributed to the improvement of crystal quality of the films.</p>
Journal
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- Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science
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Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2021 (0), 2Fa03-, 2021
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390290493077709824
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- NII Article ID
- 130008134097
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- ISSN
- 24348589
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed