Electronic properties of ultrathin Bi<sub>2</sub>Te<sub>3</sub> films grown on CaF<sub>2</sub>(111)

DOI

Bibliographic Information

Other Title
  • CaF<sub>2</sub>(111)表面上に成長させたBi<sub>2</sub>Te<sub>3</sub>超薄膜の電子物性

Abstract

<p>We have studied the electronic structure and electrical conduction of ultrathin Bi2Te3 films grown on CaF2(111)/Si(111) by molecular beam epitaxy. Angle-resolved photoelectron spectroscopy (ARPES) showed that the electronic structure of the films near the Fermi level consists of a surface band and a conduction band. Sheet electrical conductivity of the films was measured by a home-built UHV-compatible four-point probe. Residual conductivity σ0 measured at 10 K showed a rapid increase above three quintuple layer (QL). ARPES and low-energy electron diffraction (LEED) results indicate that the thickness dependence in σ0 is mainly attributed to the improvement of crystal quality of the films.</p>

Journal

Details 詳細情報について

  • CRID
    1390290493077709824
  • NII Article ID
    130008134097
  • DOI
    10.14886/jvss.2021.0_2fa03
  • ISSN
    24348589
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

Report a problem

Back to top