X-Ray Topographic Observation of Strain Generated by Thin Film (TiN) on Silicon Surface

Kusumoto Hisao, Hida Moritaka, Sakakibara Akira, Nishida Norihide, Takemoto Yoshito, Yamada Masuo

doi:10.18926/15453

Description

The strain in Si substrate induced by locally ion-plated thin film of TiN was observed by X-ray topograph (Lang technique). Circular TiN film was deposited on one side of the Si surface. In all topographs the highest blackness attributed to kinematical diffraction effect occurred at the film edge. Rosette pattern with four-lobes was observed around the film. Blackness as a whole increased with the film thickness. Strain was observed in the depth direction of substrate by limited projection method. When the slit width was narrowed, the kinematical images disappeared, and white images appeared at the film edge. All the contrast disappeared when the TiN film was completely removed in boiling HNO(3). The strain induced by the film deposition was proved to be elastic.

Journal

Memoirs of the Faculty of Engineering, Okayama University

Memoirs of the Faculty of Engineering, Okayama University 28 (2), 13-20, 1994-03-15

Faculty of Engineering, Okayama University

Details 詳細情報について

CRID: 1390290699544563712

NII Article ID: 120002307150

NII Book ID: AA10699856

ISSN: 04750071

DOI: 10.18926/15453

Web Site: https://ousar.lib.okayama-u.ac.jp/15453

Text Lang: en

Article Type: departmental bulletin paper

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