Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model

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Three-dimensional (3D) global simulations were carried out for a small Czochralski (CZ) furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three-dimensionally conjugated way. Three-dimensional features of the melt flow and thermal field in the furnace due to the influence of a transverse magnetic field were reasonably reproduced in the modeling for cases in which the crystal and crucible are rotating or are not rotating. The effects of crystal and crucible rotations on the melt-crystal interface shape and the 3D thermal field within the furnace were analyzed. The model was proved to be an effective and powerful tool for analyzing a silicon CZ furnace characterized with three-dimensionality.

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