Numerical Computation of Czochralski Mixed Convection for Molten Silicon
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- Ozoe Hiroyuki
- Institute of Advanced Material Study Kyushu University
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- Matsui Toshio
- Kobe Steel, Ltd.
Bibliographic Information
- Other Title
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- 溶解シリコンのチョクラルスキー混合対流の数値計算
- 溶融シリコンのチョクラルスキー混合対流の数値計算
- ヨウユウ シリコン ノ チョクラルスキー コンゴウ タイリュウ ノ スウチ ケ
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Abstract
The semiconducting materials such as metalic silicon and gallium arsenide are processed in a crucible at high temperature. Melted material convects under a gravitational field. In Czochralski method, the crystal silicon is pulled up with a rotation in order to keep the uniformity of the crystal component. The melted metal receives both the buoyant and the rotational centrifugal force. The resulted convection pattern depends on the combination of the parameters such as the Reynolds number, the Grashof number and the Prantl number. A stable computational code was developed and sample computations were carried out for three different values in dimensionless parameter of Gr/Re^2. Three different flow modes were found to be stable depending on this dimensionless parameter.
Journal
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- 九州大学機能物質科学研究所報告
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九州大学機能物質科学研究所報告 2 (1), 143-148, 1988-06-30
Institute of Advanced Material Study Kyushu University
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Details 詳細情報について
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- CRID
- 1390290699812273024
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- NII Article ID
- 110006177325
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- NII Book ID
- AN10060378
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- ISSN
- 09143793
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- DOI
- 10.15017/6536
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- HANDLE
- 2324/6536
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- NDL BIB ID
- 3206674
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- Text Lang
- ja
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- Data Source
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- Abstract License Flag
- Allowed