Numerical Computation of Czochralski Mixed Convection for Molten Silicon

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  • 溶解シリコンのチョクラルスキー混合対流の数値計算
  • 溶融シリコンのチョクラルスキー混合対流の数値計算
  • ヨウユウ シリコン ノ チョクラルスキー コンゴウ タイリュウ ノ スウチ ケ

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Abstract

The semiconducting materials such as metalic silicon and gallium arsenide are processed in a crucible at high temperature. Melted material convects under a gravitational field. In Czochralski method, the crystal silicon is pulled up with a rotation in order to keep the uniformity of the crystal component. The melted metal receives both the buoyant and the rotational centrifugal force. The resulted convection pattern depends on the combination of the parameters such as the Reynolds number, the Grashof number and the Prantl number. A stable computational code was developed and sample computations were carried out for three different values in dimensionless parameter of Gr/Re^2. Three different flow modes were found to be stable depending on this dimensionless parameter.

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