Resistive switching and synaptic properties of amorphous GaO<i><sub>x</sub></i> memristive devices
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- Joko Mamoru
- Osaka Univ.
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- Ikeuchi Taishi
- Osaka Univ.
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- Hayashi Yusuke
- Osaka Univ.
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- Tohei Tetsuya
- Osaka Univ.
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- Sakai Akira
- Osaka Univ.
Bibliographic Information
- Other Title
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- アモルファス酸化ガリウムを用いたメモリスタの抵抗変化特性およびシナプス特性
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 206-206, 2020-08-26
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390291932684782720
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC