Amphoteric Property of Hydrogen in Oxide Materials Probed by Muon

DOI

Bibliographic Information

Other Title
  • ミュオンで探る酸化物材料中の水素の両極性

Abstract

<p>Hydrogen (H) is the simplest ambipolar element, being recognized as one of the most important and ubiquitous defects in the field of semiconductor physics. One of the few means that have been applied to obtain experimental information about the local electronic state of isolated H is the use of muon (Mu) as pseudo-H. Here, we introduce a model that would make a paradigm shift to the microscopic understanding of Mu-related defects by providing resolution to serious discrepancies between the implications from implanted-Mu studies and theoretical predictions on the electronic state of H from ab initio density functional theory calculations in oxide semiconductors that have hindered the integration of both Mu and H knowledge.</p>

Journal

  • Butsuri

    Butsuri 77 (5), 278-286, 2022-05-05

    The Physical Society of Japan

Details 詳細情報について

  • CRID
    1390292007982657792
  • DOI
    10.11316/butsuri.77.5_278
  • ISSN
    24238872
    00290181
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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